SQ3985EV-T1_GE3 MOSFET Array Datasheet & Equivalents
P-Channel Array
TSOP-6-1.5mm
Logic-Level
VISHAY
Vds Max
20V
Id Max
3.9A
Rds(on)
300mΩ@1.8V
Vgs(th)
1.5V
Quick Reference
The SQ3985EV-T1_GE3 is a P-Channel Array in a TSOP-6-1.5mm package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 3.9A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | TSOP-6-1.5mm | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 3.9A | Max current handling |
| Power Dissipation (Pd) | 3W | Max thermal limit |
| On-Resistance (Rds(on)) | 300mΩ@1.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 4.6nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 350pF | Internal gate capacitance |
| Output Capacitance (Coss) | 110pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||