SQ2389ES-T1_BE3 MOSFET Datasheet & Specifications
P-Channel
SOT-23-3(TO-236-3)
Logic-Level
VISHAY
Vds Max
40V
Id Max
4.1A
Rds(on)
188mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The SQ2389ES-T1_BE3 is an P-Channel MOSFET in a SOT-23-3(TO-236-3) package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 4.1A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SOT-23-3(TO-236-3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4.1A | Max current handling |
| Power Dissipation (Pd) | 3W | Max thermal limit |
| On-Resistance (Rds(on)) | 188mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 12nC@10V | Switching energy |
| Input Capacitance (Ciss) | 420pF | Internal gate capacitance |
| Output Capacitance (Coss) | 80pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SQ2319ADS-T1_BE3 | P-Channel | SOT-23-3(TO-236-3) | 40V | 4.6A | 68mΩ@-10V | 2V | VISHAY 📄 PDF |