SQ1922EEH-T1_GE3 MOSFET Array Datasheet & Equivalents
N-Channel Array
SOT-363
Logic-Level
VISHAY
Vds Max
20V
Id Max
840mA
Rds(on)
350mΩ@4.5V
Vgs(th)
1.5V
Quick Reference
The SQ1922EEH-T1_GE3 is a N-Channel Array in a SOT-363 package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 840mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 840mA | Max current handling |
| Power Dissipation (Pd) | 500mW | Max thermal limit |
| On-Resistance (Rds(on)) | 350mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 1.2nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 50pF | Internal gate capacitance |
| Output Capacitance (Coss) | 21pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| PJT7800_R1_00001 | N-Channel Array | SOT-363 | 20V | 1A | 400mΩ@1.8V | 1V | PANJIT 📄 PDF |