SQ1912EH-T1_GE3 MOSFET Array Datasheet & Equivalents
N-Channel Array
SC-70-6
Logic-Level
VISHAY
Vds Max
20V
Id Max
800mA
Rds(on)
360mΩ@2.5V
Vgs(th)
1.5V
Quick Reference
The SQ1912EH-T1_GE3 is a N-Channel Array in a SC-70-6 package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 800mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SC-70-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 800mA | Max current handling |
| Power Dissipation (Pd) | 500mW | Max thermal limit |
| On-Resistance (Rds(on)) | 360mΩ@2.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 760pC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 75pF | Internal gate capacitance |
| Output Capacitance (Coss) | 32pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI1902CDL-T1-GE3 | N-Channel Array | SC-70-6 | 20V | 1.1A | 235mΩ@4.5V | 1.5V | VISHAY 📄 PDF |
| SI1902CDL-T1-BE3 | N-Channel Array | SC-70-6 | 20V | 1.1A | 306mΩ@2.5V | 1.5V | VISHAY 📄 PDF |