SPZT751T1G Transistor Datasheet & Specifications

PNP BJT | onsemi

PNPSOT-223General Purpose
VCEO
60V
Ic Max
2A
Pd Max
800mW
Gain
75

Quick Reference

The SPZT751T1G is a PNP bipolar transistor in a SOT-223 package. This datasheet provides complete specifications including 60V breakdown voltage and 2A continuous collector current. Download the SPZT751T1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
VCEO60VBreakdown voltage
IC Max2ACollector current
Pd Max800mWPower dissipation
Gain75DC current gain
Frequency75MHzTransition speed
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
FZT951QTAPNPSOT-22360V5A3W
ZX5T951GTAPNPSOT-22360V5.5A3W
FZT792ATAPNPSOT-22370V2A3W
DPLS350E-13PNPSOT-22350V3A1W
STN951PNPSOT-22360V5A1.6W
DZT2907A-13PNPSOT-22360V600mA1W
DSS60600MZ4-13PNPSOT-22360V6A2W
ZX5T1951GTAPNPSOT-22360V6A3W
BCP52-10PNPSOT-22360V1A1.5W