SP80N09GNK MOSFET Datasheet & Specifications
N-Channel
PDFN5X6-8L
Logic-Level
Siliup
Vds Max
80V
Id Max
60A
Rds(on)
16mΩ@4.5V
Vgs(th)
3V
Quick Reference
The SP80N09GNK is an N-Channel MOSFET in a PDFN5X6-8L package, manufactured by Siliup. It supports a drain-source breakdown voltage of 80V and a continuous drain current of 60A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Siliup | Original Manufacturer |
| Package | PDFN5X6-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 80V | Max breakdown voltage |
| Continuous Drain Current (Id) | 60A | Max current handling |
| Power Dissipation (Pd) | 71.4W | Max thermal limit |
| On-Resistance (Rds(on)) | 16mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 16nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1nF | Internal gate capacitance |
| Output Capacitance (Coss) | 330pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||