SP30P25DNJ MOSFET Datasheet & Specifications
P-Channel
PDFNWB-8L(3.3x3.3)
Logic-Level
Siliup
Vds Max
30V
Id Max
10A
Rds(on)
25mΩ@10V;36mΩ@4.5V
Vgs(th)
1.5V
Quick Reference
The SP30P25DNJ is an P-Channel MOSFET in a PDFNWB-8L(3.3x3.3) package, manufactured by Siliup. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 10A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Siliup | Original Manufacturer |
| Package | PDFNWB-8L(3.3x3.3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 10A | Max current handling |
| Power Dissipation (Pd) | 16W | Max thermal limit |
| On-Resistance (Rds(on)) | 25mΩ@10V;36mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 13nC@10V | Switching energy |
| Input Capacitance (Ciss) | 850pF | Internal gate capacitance |
| Output Capacitance (Coss) | 116pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SP30P08NJ | P-Channel | PDFNWB-8L(3.3x3.3) | 30V | 40A | 7.5mΩ@10V 11mΩ@4.5V |
1.6V | Siliup 📄 PDF |
| SP40P18NJ | P-Channel | PDFNWB-8L(3.3x3.3) | 40V | 20A | 18mΩ@10V 25mΩ@4.5V |
1.7V | Siliup 📄 PDF |
| SP60P25NJ | P-Channel | PDFNWB-8L(3.3x3.3) | 60V | 25A | 25mΩ@10V 30mΩ@4.5V |
1.7V | Siliup 📄 PDF |