SP3023CTM MOSFET Datasheet & Specifications
P-Channel
TO-252-4L
Logic-Level
Siliup
Vds Max
30V
Id Max
25A;21A
Rds(on)
10mΩ@10V;20mΩ@10V
Vgs(th)
1.5V
Quick Reference
The SP3023CTM is an P-Channel MOSFET in a TO-252-4L package, manufactured by Siliup. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 25A;21A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Siliup | Original Manufacturer |
| Package | TO-252-4L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 25A;21A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 10mΩ@10V;20mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 6nC@4.5V;9.8nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 583pF;930pF | Internal gate capacitance |
| Output Capacitance (Coss) | 77pF;148pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||