SP2006KT7 MOSFET Datasheet & Specifications
P-Channel
SOT-723
Logic-Level
Siliup
Vds Max
20V
Id Max
660mA
Rds(on)
650mΩ@4.5V
Vgs(th)
650mV
Quick Reference
The SP2006KT7 is an P-Channel MOSFET in a SOT-723 package, manufactured by Siliup. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 660mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Siliup | Original Manufacturer |
| Package | SOT-723 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 660mA | Max current handling |
| Power Dissipation (Pd) | 150mW | Max thermal limit |
| On-Resistance (Rds(on)) | 650mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 650mV | Voltage required to turn on |
| Gate Charge (Qg) | 1.25nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 75pF | Internal gate capacitance |
| Output Capacitance (Coss) | 20pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| TPNTK3139PT1G | P-Channel | SOT-723 | 20V | 850mA | 730mΩ@2.5V | 500mV | TECH PUBLIC 📄 PDF |
| SP2004KT7J | P-Channel | SOT-723 | 20V | 700mA | 1Ω@1.8V | 1V | Siliup 📄 PDF |