SP1022CP8 MOSFET Datasheet & Specifications

P-Channel SOP-8 Logic-Level Siliup
Vds Max
100V
Id Max
2.5A
Rds(on)
160mΩ;230mΩ
Vgs(th)
2.5V

Quick Reference

The SP1022CP8 is an P-Channel MOSFET in a SOP-8 package, manufactured by Siliup. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 2.5A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSiliupOriginal Manufacturer
PackageSOP-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)2.5AMax current handling
Power Dissipation (Pd)2WMax thermal limit
On-Resistance (Rds(on))160mΩ;230mΩResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)13.6nC@10V;16nC@10VSwitching energy
Input Capacitance (Ciss)498pF;721pFInternal gate capacitance
Output Capacitance (Coss)30pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
MCQ05P10Y-TP P-Channel SOP-8 100V 4.5A 120mΩ@4.5V 2.5V