SP1012CNK MOSFET Datasheet & Specifications

P-Channel PDFN-8L(5x6) Logic-Level Siliup
Vds Max
100V
Id Max
8A;7A
Rds(on)
90mΩ@10V;100mΩ@4.5V;230mΩ@10V;240mΩ@4.5V
Vgs(th)
1.8V

Quick Reference

The SP1012CNK is an P-Channel MOSFET in a PDFN-8L(5x6) package, manufactured by Siliup. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 8A;7A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSiliupOriginal Manufacturer
PackagePDFN-8L(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)8A;7AMax current handling
Power Dissipation (Pd)20WMax thermal limit
On-Resistance (Rds(on))90mΩ@10V;100mΩ@4.5V;230mΩ@10V;240mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.8VVoltage required to turn on
Gate Charge (Qg)13.6nC@10V;16nC@10VSwitching energy
Input Capacitance (Ciss)695pF;721pFInternal gate capacitance
Output Capacitance (Coss)25pF;30pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
XR30P10F P-Channel PDFN-8L(5x6) 100V 30A 38mΩ@10V 1.6V
XNRUSEMI 📄 PDF
SP1012ACNK P-Channel PDFN-8L(5x6) 100V 10A;7A 70mΩ@10V
230mΩ@10V
1.8V
Siliup 📄 PDF
SP1011CNK P-Channel PDFN-8L(5x6) 100V 15A 80mΩ@10V
85mΩ@4.5V
85mΩ@10V
95mΩ@4.5V
1.6V;1.8V
Siliup 📄 PDF