SP015N06GHTG MOSFET Datasheet & Specifications

N-Channel TO-220F Logic-Level Siliup
Vds Max
150V
Id Max
120A
Rds(on)
6.9mΩ@10V
Vgs(th)
3V

Quick Reference

The SP015N06GHTG is an N-Channel MOSFET in a TO-220F package, manufactured by Siliup. It supports a drain-source breakdown voltage of 150V and a continuous drain current of 120A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSiliupOriginal Manufacturer
PackageTO-220FPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)150VMax breakdown voltage
Continuous Drain Current (Id)120AMax current handling
Power Dissipation (Pd)230WMax thermal limit
On-Resistance (Rds(on))6.9mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)70nC@10VSwitching energy
Input Capacitance (Ciss)5.24nFInternal gate capacitance
Output Capacitance (Coss)430pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.