SP012N02AGHTO MOSFET Datasheet & Specifications
N-Channel
TOLL
High-Current
Siliup
Vds Max
120V
Id Max
300A
Rds(on)
2.5mΩ@10V
Vgs(th)
4.5V
Quick Reference
The SP012N02AGHTO is an N-Channel MOSFET in a TOLL package, manufactured by Siliup. It supports a drain-source breakdown voltage of 120V and a continuous drain current of 300A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Siliup | Original Manufacturer |
| Package | TOLL | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 120V | Max breakdown voltage |
| Continuous Drain Current (Id) | 300A | Max current handling |
| Power Dissipation (Pd) | 320W | Max thermal limit |
| On-Resistance (Rds(on)) | 2.5mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4.5V | Voltage required to turn on |
| Gate Charge (Qg) | 213nC@10V | Switching energy |
| Input Capacitance (Ciss) | 12.7nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MGV022N14N | N-Channel | TOLL | 135V | 315A | 2.2mΩ@10V | 4V | Megain 📄 PDF |