SP011N02GHTO MOSFET Datasheet & Specifications
N-Channel
TOLL-8
Logic-Level
Siliup
Vds Max
110V
Id Max
260A
Rds(on)
2mΩ@10V
Vgs(th)
3V
Quick Reference
The SP011N02GHTO is an N-Channel MOSFET in a TOLL-8 package, manufactured by Siliup. It supports a drain-source breakdown voltage of 110V and a continuous drain current of 260A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Siliup | Original Manufacturer |
| Package | TOLL-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 110V | Max breakdown voltage |
| Continuous Drain Current (Id) | 260A | Max current handling |
| Power Dissipation (Pd) | 280W | Max thermal limit |
| On-Resistance (Rds(on)) | 2mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 160nC@10V | Switching energy |
| Input Capacitance (Ciss) | 9.625nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.608nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| HK12N030SG | N-Channel | TOLL-8 | 120V | 300A | 1.9mΩ@10V | 3.3V | R+O 📄 PDF |