SNSS30201MR6T1G Datasheet & Equivalents
NPN
TSOP-6
General Purpose
onsemi
VCEO
30V
Ic Max
2A
Pd Max
1.18W
hFE Gain
300
Quick Reference
The SNSS30201MR6T1G is a NPN bipolar junction transistor in a TSOP-6 package, manufactured by onsemi. It supports a breakdown voltage of 30V and continuous collector current of 2A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TSOP-6 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 30V | Max breakdown voltage |
| Collector Current (Ic) | 2A | Max current handling |
| Power Dissipation (Pd) | 1.18W | Max thermal limit |
| DC Current Gain (hFE) | 300 | Base signal amplification ratio |
| Transition Frequency (fT) | 300MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| NST489AMT1G | NPN | TSOP-6 | 30V | 3A | 300 | 1.18W | onsemi 📄 PDF |