SMMBTA56WT3G-HXY Transistor Datasheet & Specifications

PNP BJT | HXY MOSFET

PNPSOT-323General Purpose
VCEO
150V
Ic Max
600mA
Pd Max
200mW
Gain
300
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Quick Reference

The SMMBTA56WT3G-HXY is a PNP bipolar transistor in a SOT-323 package. This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the SMMBTA56WT3G-HXY datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-323Physical mounting
VCEO150VBreakdown voltage
IC Max600mACollector current
Pd Max200mWPower dissipation
Gain300DC current gain
Frequency100MHzTransition speed
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
2SA1579PNPSOT-323120V50mA100mW
MMST5401(RANGE:100-300)PNPSOT-323150V600mA200mW
MMSTA56-7-F-HXYPNPSOT-323150V600mA200mW
PMSTA56-HXYPNPSOT-323150V600mA200mW
NSVMMBT5401WT1G-HXYPNPSOT-323150V600mA200mW
BC806-16WF-HXYPNPSOT-323150V600mA200mW
MMBTA56WT1G-HXYPNPSOT-323150V600mA200mW
MMBT5401WPNPSOT-323150V600mA200mW
MMST5401PNPSOT-323150V600mA200mW
View all SOT-323 PNP Transistors ›