SM6K2T110 MOSFET Array Datasheet & Equivalents
N-Channel Array
SC-74(SOT-457)
Logic-Level
ROHM
Vds Max
60V
Id Max
200mA
Rds(on)
4Ω@4V
Vgs(th)
2.5V
Quick Reference
The SM6K2T110 is a N-Channel Array in a SC-74(SOT-457) package, manufactured by ROHM. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 200mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | SC-74(SOT-457) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 200mA | Max current handling |
| Power Dissipation (Pd) | 200mW | Max thermal limit |
| On-Resistance (Rds(on)) | 4Ω@4V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 2.2nC@10V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | 8pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||