SIZ350DT-T1-GE3 MOSFET Array Datasheet & Equivalents
N-Channel Array
Power-33-8(3x3)
Logic-Level
VISHAY
Vds Max
30V
Id Max
30A
Rds(on)
9.44mΩ@4.5V
Vgs(th)
2.4V
Quick Reference
The SIZ350DT-T1-GE3 is a N-Channel Array in a Power-33-8(3x3) package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 30A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | Power-33-8(3x3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 30A | Max current handling |
| Power Dissipation (Pd) | 3.7W | Max thermal limit |
| On-Resistance (Rds(on)) | 9.44mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.4V | Voltage required to turn on |
| Gate Charge (Qg) | 20.3nC@10V | Switching energy |
| Input Capacitance (Ciss) | 940pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SIZ340BDT-T1-GE3 | N-Channel Array | Power-33-8(3x3) | 30V | 69.3A | 8.56mΩ@10V | 2.4V | VISHAY 📄 PDF |
| SIZ348DT-T1-GE3 | N-Channel Array | Power-33-8(3x3) | 30V | 30A | 10.19mΩ@4.5V | 2.4V | VISHAY 📄 PDF |
| SIZ340ADT-T1-GE3 | N-Channel Array | Power-33-8(3x3) | 30V | 69.7A | 14.4mΩ@4.5V | 2.4V | VISHAY 📄 PDF |