SISF20DN-T1-GE3 MOSFET Array Datasheet & Equivalents
N-Channel Array
-
Logic-Level
VISHAY
Vds Max
60V
Id Max
52A
Rds(on)
18.5mΩ@4.5V
Vgs(th)
3V
Quick Reference
The SISF20DN-T1-GE3 is a N-Channel Array in a - package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 52A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 52A | Max current handling |
| Power Dissipation (Pd) | 69.4W | Max thermal limit |
| On-Resistance (Rds(on)) | 18.5mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 33nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.29nF | Internal gate capacitance |
| Output Capacitance (Coss) | 340pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| FS70UMJ-06F-REN | N-Channel Array | - | 60V | 70A | 7mΩ@10V | 2V | RENESAS 📄 PDF |
| ISG0616N10NM5HSCATMA1 | N-Channel Array | - | 100V | 139A | 3.4mΩ@10V 4.3mΩ@6V |
3V | Infineon 📄 PDF |