SISA18ADN-T1-GE3 MOSFET Datasheet & Specifications
N-Channel
PowerPAK1212-8
Logic-Level
VISHAY
Vds Max
30V
Id Max
38.3A
Rds(on)
12mΩ@4.5V
Vgs(th)
2.4V
Quick Reference
The SISA18ADN-T1-GE3 is an N-Channel MOSFET in a PowerPAK1212-8 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 38.3A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | PowerPAK1212-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 38.3A | Max current handling |
| Power Dissipation (Pd) | 19.8W | Max thermal limit |
| On-Resistance (Rds(on)) | 12mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.4V | Voltage required to turn on |
| Gate Charge (Qg) | 21.5nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1nF | Internal gate capacitance |
| Output Capacitance (Coss) | 287pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SISA14BDN-T1-GE3 | N-Channel | PowerPAK1212-8 | 30V | 72A | 5.38mΩ@10V | 2.2V | VISHAY 📄 PDF |
| SIS862ADN-T1-GE3 | N-Channel | PowerPAK1212-8 | 60V | 52A | 11mΩ@4.5V | 2.5V | VISHAY 📄 PDF |