SIA906EDJ-T1-GE3 MOSFET Array Datasheet & Equivalents
N-Channel Array
WSON-6-EP(2x2)
Logic-Level
VISHAY
Vds Max
20V
Id Max
4.5A
Rds(on)
63mΩ@2.5V
Vgs(th)
1.4V
Quick Reference
The SIA906EDJ-T1-GE3 is a N-Channel Array in a WSON-6-EP(2x2) package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 4.5A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | WSON-6-EP(2x2) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4.5A | Max current handling |
| Power Dissipation (Pd) | 7.8W | Max thermal limit |
| On-Resistance (Rds(on)) | 63mΩ@2.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.4V | Voltage required to turn on |
| Gate Charge (Qg) | 12nC@10V | Switching energy |
| Input Capacitance (Ciss) | 350pF | Internal gate capacitance |
| Output Capacitance (Coss) | 63pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||