SIA519EDJ-T1-GE3 MOSFET Datasheet & Specifications
P-Channel
WDFN-6-EP(2x2)
Logic-Level
JSMSEMI
Vds Max
20V
Id Max
4.2A
Rds(on)
90mΩ@4.5V
Vgs(th)
1.4V
Quick Reference
The SIA519EDJ-T1-GE3 is an P-Channel MOSFET in a WDFN-6-EP(2x2) package, manufactured by JSMSEMI. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 4.2A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | WDFN-6-EP(2x2) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4.2A | Max current handling |
| Power Dissipation (Pd) | 7.8W | Max thermal limit |
| On-Resistance (Rds(on)) | 90mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.4V | Voltage required to turn on |
| Gate Charge (Qg) | 10.5nC@10V | Switching energy |
| Input Capacitance (Ciss) | 350pF | Internal gate capacitance |
| Output Capacitance (Coss) | 105pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||