SiA444DJT-T1-GE3-VB MOSFET Datasheet & Specifications
N-Channel
DFN-6(2x2)
Logic-Level
VBsemi Elec
Vds Max
30V
Id Max
6A
Rds(on)
23mΩ@10V;27mΩ@4.5V
Vgs(th)
1.2V;2.5V
Quick Reference
The SiA444DJT-T1-GE3-VB is an N-Channel MOSFET in a DFN-6(2x2) package, manufactured by VBsemi Elec. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 6A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VBsemi Elec | Original Manufacturer |
| Package | DFN-6(2x2) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 6A | Max current handling |
| Power Dissipation (Pd) | 1.3W | Max thermal limit |
| On-Resistance (Rds(on)) | 23mΩ@10V;27mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.2V;2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 4.2nC@10V;8.2nC@15V | Switching energy |
| Input Capacitance (Ciss) | 424pF | Internal gate capacitance |
| Output Capacitance (Coss) | 100pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||