SI7898DP-T1-GE3 MOSFET Datasheet & Specifications
N-Channel
PowerPAKSO-8
Standard Power
VISHAY
Vds Max
150V
Id Max
4.8A
Rds(on)
95mΩ@6V
Vgs(th)
4V
Quick Reference
The SI7898DP-T1-GE3 is an N-Channel MOSFET in a PowerPAKSO-8 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 150V and a continuous drain current of 4.8A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | PowerPAKSO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 150V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4.8A | Max current handling |
| Power Dissipation (Pd) | 5W | Max thermal limit |
| On-Resistance (Rds(on)) | 95mΩ@6V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 21nC@10V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI7450DP-T1-E3 | N-Channel | PowerPAKSO-8 | 200V | 5.3A | 80mΩ@10V | 2V | VISHAY 📄 PDF |