SI7655DN-T1-GE3 MOSFET Datasheet & Specifications
P-Channel
SMD
Logic-Level
VISHAY
Vds Max
20V
Id Max
31A
Rds(on)
8.5mΩ@2.5V
Vgs(th)
500mV
Quick Reference
The SI7655DN-T1-GE3 is an P-Channel MOSFET in a SMD package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 31A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SMD | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 31A | Max current handling |
| Power Dissipation (Pd) | 4.8W | Max thermal limit |
| On-Resistance (Rds(on)) | 8.5mΩ@2.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 500mV | Voltage required to turn on |
| Gate Charge (Qg) | 72nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 6.6nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -50℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||