SI7617DN-T1-GE3 MOSFET Datasheet & Specifications
P-Channel
PowerPAK1212-8
Logic-Level
VISHAY
Vds Max
30V
Id Max
35A
Rds(on)
12.3mΩ@10V
Vgs(th)
2.5V
Quick Reference
The SI7617DN-T1-GE3 is an P-Channel MOSFET in a PowerPAK1212-8 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 35A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | PowerPAK1212-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 35A | Max current handling |
| Power Dissipation (Pd) | 52W | Max thermal limit |
| On-Resistance (Rds(on)) | 12.3mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 59nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.8nF | Internal gate capacitance |
| Output Capacitance (Coss) | 370pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI7129DN-T1-GE3 | P-Channel | PowerPAK1212-8 | 30V | 35A | 11.4mΩ@10V | 1.5V | VISHAY 📄 PDF |
| SI7101DN-T1-GE3 | P-Channel | PowerPAK1212-8 | 30V | 35A | 13mΩ@4.5V | 2.5V | VISHAY 📄 PDF |