SI7135DP-T1-GE3 MOSFET Datasheet & Specifications
P-Channel
PowerPAKSO-8
Logic-Level
VISHAY
Vds Max
30V
Id Max
60A
Rds(on)
6.2mΩ@4.5V
Vgs(th)
3V
Quick Reference
The SI7135DP-T1-GE3 is an P-Channel MOSFET in a PowerPAKSO-8 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 60A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | PowerPAKSO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 60A | Max current handling |
| Power Dissipation (Pd) | 104W | Max thermal limit |
| On-Resistance (Rds(on)) | 6.2mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 250nC@10V | Switching energy |
| Input Capacitance (Ciss) | 8.65nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI7145DP-T1-GE3 | P-Channel | PowerPAKSO-8 | 30V | 60A | 3.75mΩ@4.5V | 2.3V | VISHAY 📄 PDF |
| SI7155DP-T1-GE3 | P-Channel | PowerPAKSO-8 | 40V | 100A | 4.6mΩ@4.5V | 2.3V | VISHAY 📄 PDF |
| SIR5607DP-T1-RE3 | P-Channel | PowerPAKSO-8 | 60V | 90.9A | 12mΩ@4.5V | 2.6V | VISHAY 📄 PDF |
| SIR681DP-T1-RE3 | P-Channel | PowerPAKSO-8 | 80V | 71.9A | 16.7mΩ@4.5V | 2.6V | VISHAY 📄 PDF |