SI5515CDC-T1-GE3 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
ChipFET1206-8
Logic-Level
VISHAY
Vds Max
20V
Id Max
49A
Rds(on)
156mΩ@1.8V
Vgs(th)
800mV
Quick Reference
The SI5515CDC-T1-GE3 is a Dual N/P-Channel in a ChipFET1206-8 package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 49A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | ChipFET1206-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 49A | Max current handling |
| Power Dissipation (Pd) | 3.1W | Max thermal limit |
| On-Resistance (Rds(on)) | 156mΩ@1.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 800mV | Voltage required to turn on |
| Gate Charge (Qg) | 6.5nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 632pF | Internal gate capacitance |
| Output Capacitance (Coss) | 80pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||