SI5513CDC-T1-E3 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SMD-8P,3.2x1.6mm
Logic-Level
VISHAY
Vds Max
20V
Id Max
4A
Rds(on)
255mΩ@2.5V
Vgs(th)
1.5V
Quick Reference
The SI5513CDC-T1-E3 is a Dual N/P-Channel in a SMD-8P,3.2x1.6mm package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 4A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SMD-8P,3.2x1.6mm | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4A | Max current handling |
| Power Dissipation (Pd) | 3.1W | Max thermal limit |
| On-Resistance (Rds(on)) | 255mΩ@2.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 5.6nC@5V | Switching energy |
| Input Capacitance (Ciss) | 285pF | Internal gate capacitance |
| Output Capacitance (Coss) | 65pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| NTHD3100CT1G | Dual N/P-Channel | SMD-8P,3.2x1.6mm | 20V | 4.4A | 115mΩ@2.5V | 1.2V | onsemi 📄 PDF |
| SI5513CDC-T1-GE3 | Dual N/P-Channel | SMD-8P,3.2x1.6mm | 20V | 49A | 255mΩ@2.5V | 1.5V | VISHAY 📄 PDF |