SI4946BEY-T1-GE3 MOSFET Array Datasheet & Equivalents
N-Channel Array
SO-8
Logic-Level
VISHAY
Vds Max
60V
Id Max
6.5A
Rds(on)
41mΩ@10V
Vgs(th)
3V
Quick Reference
The SI4946BEY-T1-GE3 is a N-Channel Array in a SO-8 package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 6.5A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 6.5A | Max current handling |
| Power Dissipation (Pd) | 3.7W | Max thermal limit |
| On-Resistance (Rds(on)) | 41mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 25nC@10V | Switching energy |
| Input Capacitance (Ciss) | 840pF | Internal gate capacitance |
| Output Capacitance (Coss) | 71pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SQJB60EP-T1_BE3 | N-Channel Array | SO-8 | 60V | 30A | 16mΩ@4.5V | 2.5V | VISHAY 📄 PDF |
| SI9634DY-T1-GE3 | N-Channel Array | SO-8 | 60V | 8A | 38mΩ@4.5V | 3V | VISHAY 📄 PDF |
| SQ4946CEY-T1_GE3 | N-Channel Array | SO-8 | 60V | 7A | 40mΩ@10V | 2.5V | VISHAY 📄 PDF |
| DMNH6042SSD-13 | N-Channel Array | SO-8 | 60V | 16.7A | 65mΩ@4.5V | 3V | DIODES 📄 PDF |
| DMNH6042SSDQ-13 | N-Channel Array | SO-8 | 60V | 16.7A | 65mΩ@4.5V | 3V | DIODES 📄 PDF |