SI4931DY-T1-E3 MOSFET Array Datasheet & Equivalents
P-Channel Array
SO-8
Logic-Level
VISHAY
Vds Max
12V
Id Max
8.9A
Rds(on)
28mΩ@1.8V
Vgs(th)
1V
Quick Reference
The SI4931DY-T1-E3 is a P-Channel Array in a SO-8 package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 12V and a continuous drain current of 8.9A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 12V | Max breakdown voltage |
| Continuous Drain Current (Id) | 8.9A | Max current handling |
| Power Dissipation (Pd) | 2W | Max thermal limit |
| On-Resistance (Rds(on)) | 28mΩ@1.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 52nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI4931DY-T1-GE3 | P-Channel Array | SO-8 | 12V | 8.9A | 28mΩ@1.8V | 1V | VISHAY 📄 PDF |
| IRF7324TRPBF | P-Channel Array | SO-8 | 20V | 9A | 26mΩ@2.5V | 1V | Infineon 📄 PDF |