SI4174DY-T1-GE3 MOSFET Datasheet & Specifications
N-Channel
SOIC-8
Logic-Level
VISHAY
Vds Max
30V
Id Max
17A
Rds(on)
13mΩ@4.5V
Vgs(th)
2.2V
Quick Reference
The SI4174DY-T1-GE3 is an N-Channel MOSFET in a SOIC-8 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 17A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SOIC-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 17A | Max current handling |
| Power Dissipation (Pd) | 5W | Max thermal limit |
| On-Resistance (Rds(on)) | 13mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.2V | Voltage required to turn on |
| Gate Charge (Qg) | 27nC@10V | Switching energy |
| Input Capacitance (Ciss) | 985pF | Internal gate capacitance |
| Output Capacitance (Coss) | 205pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IRF8734TRPBF | N-Channel | SOIC-8 | 30V | 21A | 5.1mΩ@4.5V | 2.35V | Infineon 📄 PDF |
| AO4482 | N-Channel | SOIC-8 | 100V | 42A | 72mΩ@10V | 2.7V | AOS 📄 PDF |