SI4101DY-T1-GE3(ES) MOSFET Datasheet & Specifications

P-Channel SOP-8 Logic-Level ElecSuper
Vds Max
30V
Id Max
12.4A
Rds(on)
14mΩ@4.5V
Vgs(th)
2V

Quick Reference

The SI4101DY-T1-GE3(ES) is an P-Channel MOSFET in a SOP-8 package, manufactured by ElecSuper. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 12.4A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerElecSuperOriginal Manufacturer
PackageSOP-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)12.4AMax current handling
Power Dissipation (Pd)3WMax thermal limit
On-Resistance (Rds(on))14mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)35nC@10VSwitching energy
Input Capacitance (Ciss)2.76nFInternal gate capacitance
Output Capacitance (Coss)323pFInternal output capacitance
Operating Temp-Safe junction temperature range

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