SI2338DS-T1-BE3 MOSFET Datasheet & Specifications
N-Channel
SOT-23(TO-236)
Standard Power
VISHAY
Vds Max
30V
Id Max
5.5A
Rds(on)
28mΩ@10V
Vgs(th)
-
Quick Reference
The SI2338DS-T1-BE3 is an N-Channel MOSFET in a SOT-23(TO-236) package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 5.5A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SOT-23(TO-236) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 5.5A | Max current handling |
| Power Dissipation (Pd) | 1.6W | Max thermal limit |
| On-Resistance (Rds(on)) | 28mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | - | Voltage required to turn on |
| Gate Charge (Qg) | 4.2nC@10V | Switching energy |
| Input Capacitance (Ciss) | 424pF | Internal gate capacitance |
| Output Capacitance (Coss) | 100pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |