SI2318DS-T1-E3-MS MOSFET Datasheet & Specifications
N-Channel
SOT-23
Logic-Level
MSKSEMI
Vds Max
40V
Id Max
4A
Rds(on)
36mΩ@10V;45mΩ@4.5V
Vgs(th)
1.6V
Quick Reference
The SI2318DS-T1-E3-MS is an N-Channel MOSFET in a SOT-23 package, manufactured by MSKSEMI. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 4A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MSKSEMI | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4A | Max current handling |
| Power Dissipation (Pd) | 1.56W | Max thermal limit |
| On-Resistance (Rds(on)) | 36mΩ@10V;45mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.6V | Voltage required to turn on |
| Gate Charge (Qg) | 4.7nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 420pF | Internal gate capacitance |
| Output Capacitance (Coss) | 65pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |