SI2305A MOSFET Datasheet & Specifications

P-Channel SOT-23-3L Logic-Level GOODWORK
Vds Max
20V
Id Max
4.1A
Rds(on)
33mΩ@4.5V;42mΩ@2.5V
Vgs(th)
700mV

Quick Reference

The SI2305A is an P-Channel MOSFET in a SOT-23-3L package, manufactured by GOODWORK. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 4.1A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerGOODWORKOriginal Manufacturer
PackageSOT-23-3LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)4.1AMax current handling
Power Dissipation (Pd)1.31WMax thermal limit
On-Resistance (Rds(on))33mΩ@4.5V;42mΩ@2.5VResistance when turned fully on
Gate Threshold (Vgs(th))700mVVoltage required to turn on
Gate Charge (Qg)8.8nC@4.5VSwitching energy
Input Capacitance (Ciss)830pFInternal gate capacitance
Output Capacitance (Coss)132pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
20P09L P-Channel SOT-23-3L 20V 9A 18mΩ@4.5V 1V
ST2341S23RG P-Channel SOT-23-3L 20V 5.3A 30mΩ@4.5V 900mV
STANSON Tech. 📄 PDF
AO3401A P-Channel SOT-23-3L 30V 4.2A 44mΩ@10V 800mV
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WST3401A P-Channel SOT-23-3L 30V 5A 57mΩ@10V 1.2V
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