SI1029X-T1-GE3 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SC-89-6
Logic-Level
VISHAY
Vds Max
60V
Id Max
320mA
Rds(on)
8Ω@4.5V
Vgs(th)
3V
Quick Reference
The SI1029X-T1-GE3 is a Dual N/P-Channel in a SC-89-6 package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 320mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SC-89-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 320mA | Max current handling |
| Power Dissipation (Pd) | 280mW | Max thermal limit |
| On-Resistance (Rds(on)) | 8Ω@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | 10pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||