SI1024X-T1-GE3 MOSFET Array Datasheet & Equivalents

N-Channel Array SOT-563 Logic-Level VISHAY
Vds Max
20V
Id Max
600mA
Rds(on)
1.25Ī©@1.8V
Vgs(th)
900mV

Quick Reference

The SI1024X-T1-GE3 is a N-Channel Array in a SOT-563 package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 600mA. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageSOT-563Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)600mAMax current handling
Power Dissipation (Pd)145mWMax thermal limit
On-Resistance (Rds(on))1.25Ī©@1.8VResistance when turned fully on
Gate Threshold (Vgs(th))900mVVoltage required to turn on
Gate Charge (Qg)750pC@4.5VSwitching energy
Input Capacitance (Ciss)75pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55ā„ƒ~+150ā„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
PJX8802_R1_00001 N-Channel Array SOT-563 20V 700mA 150mΩ@4.5V 1V
PJX8806_R1_00001 N-Channel Array SOT-563 20V 800mA 400mΩ@4.5V 1V
DMG1024UV-7 N-Channel Array SOT-563 20V 1.38A 450mΩ@4.5V 1V
DMN2710UVQ-7 N-Channel Array SOT-563 20V 920mA 600mΩ@2.5V 1V
DMN2710UVQ-13 N-Channel Array SOT-563 20V 920mA 600mΩ@2.5V 1V
SIX3134KA-TP N-Channel Array SOT-563 20V 750mA 700mΩ@1.8V 950mV
PJX8804_R1_00001 N-Channel Array SOT-563 30V 600mA 600mΩ@1.8V 1.3V
DMN32D0LVQ-7 N-Channel Array SOT-563 30V 680mA 2.2Ī©@1.8V 1.2V
DMN32D0LVQ-13 N-Channel Array SOT-563 30V 680mA 2.2Ī©@1.8V 1.2V