SH8ME5TB1 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SOP-8
Logic-Level
ROHM
Vds Max
100V
Id Max
4.5A
Rds(on)
91mΩ@10V
Vgs(th)
2.5V
Quick Reference
The SH8ME5TB1 is a Dual N/P-Channel in a SOP-8 package, manufactured by ROHM. Each channel supports a drain-source breakdown voltage of 100V and a continuous drain current of 4.5A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | SOP-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4.5A | Max current handling |
| Power Dissipation (Pd) | 2W | Max thermal limit |
| On-Resistance (Rds(on)) | 91mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 52nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.1nF | Internal gate capacitance |
| Output Capacitance (Coss) | 100pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |