SH8M24GZETB MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SOP-8
Logic-Level
ROHM
Vds Max
45V
Id Max
6A
Rds(on)
63mΩ@10V
Vgs(th)
2.5V
Quick Reference
The SH8M24GZETB is a Dual N/P-Channel in a SOP-8 package, manufactured by ROHM. Each channel supports a drain-source breakdown voltage of 45V and a continuous drain current of 6A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | SOP-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 45V | Max breakdown voltage |
| Continuous Drain Current (Id) | 6A | Max current handling |
| Power Dissipation (Pd) | 3.1W | Max thermal limit |
| On-Resistance (Rds(on)) | 63mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 18.2nC@5V | Switching energy |
| Input Capacitance (Ciss) | 1.7nF | Internal gate capacitance |
| Output Capacitance (Coss) | 200pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |