SH8K4TB1 MOSFET Array Datasheet & Equivalents

N-Channel Array SOP-8 Logic-Level ROHM
Vds Max
30V
Id Max
9A
Rds(on)
24mΩ@4V
Vgs(th)
2.5V

Quick Reference

The SH8K4TB1 is a N-Channel Array in a SOP-8 package, manufactured by ROHM. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 9A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageSOP-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)9AMax current handling
Power Dissipation (Pd)2WMax thermal limit
On-Resistance (Rds(on))24mΩ@4VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)21nC@5VSwitching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
MCQD12N03A-TP N-Channel Array SOP-8 30V 12A 12mΩ@10V 2.5V
PJL9824_R2_00001 N-Channel Array SOP-8 40V 13A 7.5mΩ@4.5V 2.5V
PANJIT 📄 PDF
SH8KB7TB1 N-Channel Array SOP-8 40V 13.5A 8.4mΩ@10V 2.5V
PJL9854_R2_00001 N-Channel Array SOP-8 40V 9A 17mΩ@4.5V 2.5V
PANJIT 📄 PDF