SE6003C MOSFET Datasheet & Specifications
N-Channel
TO-251
Logic-Level
SINO-IC
Vds Max
60V
Id Max
3A
Rds(on)
125mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The SE6003C is an N-Channel MOSFET in a TO-251 package, manufactured by SINO-IC. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 3A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SINO-IC | Original Manufacturer |
| Package | TO-251 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 3A | Max current handling |
| Power Dissipation (Pd) | 1.7W | Max thermal limit |
| On-Resistance (Rds(on)) | 125mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 6nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 247pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IRFU320PBF | N-Channel | TO-251 | 400V | 3.1A | 1.8Ω@10V | 2V | VISHAY 📄 PDF |