SE30P12D MOSFET Datasheet & Specifications

P-Channel DFN-8(3x3) Logic-Level SINO-IC
Vds Max
30V
Id Max
12A
Rds(on)
25mΩ@4.5V
Vgs(th)
3V

Quick Reference

The SE30P12D is an P-Channel MOSFET in a DFN-8(3x3) package, manufactured by SINO-IC. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 12A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSINO-ICOriginal Manufacturer
PackageDFN-8(3x3)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)12AMax current handling
Power Dissipation (Pd)2WMax thermal limit
On-Resistance (Rds(on))25mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)100nC@10VSwitching energy
Input Capacitance (Ciss)5.27nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
WSD30L68DN33 P-Channel DFN-8(3x3) 30V 68A 5.8mΩ@10V 1.3V
Winsok Semicon 📄 PDF
WSD30L40DN33 P-Channel DFN-8(3x3) 30V 40A 24mΩ@4.5V 2.3V
Winsok Semicon 📄 PDF
WSD40L48DN33 P-Channel DFN-8(3x3) 40V 30A 16mΩ@4.5V 1.3V
Winsok Semicon 📄 PDF