SE30150G MOSFET Datasheet & Specifications

N-Channel DFN5X6-8L Logic-Level SINO-IC
Vds Max
30V
Id Max
150A
Rds(on)
2.5mΩ@45V
Vgs(th)
2.5V

Quick Reference

The SE30150G is an N-Channel MOSFET in a DFN5X6-8L package, manufactured by SINO-IC. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 150A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSINO-ICOriginal Manufacturer
PackageDFN5X6-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)150AMax current handling
Power Dissipation (Pd)187WMax thermal limit
On-Resistance (Rds(on))2.5mΩ@45VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)56.9nC@10VSwitching energy
Input Capacitance (Ciss)4.345nFInternal gate capacitance
Output Capacitance (Coss)340pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
NCEP30T17GU N-Channel DFN5X6-8L 30V 170A 0.97mΩ@10V
1.25mΩ@4.5V
1.5V
NCEP40T15GU N-Channel DFN5X6-8L 40V 150A 1.35mΩ@10V 2.2V