SDM51AG04KV MOSFET Datasheet & Specifications
N-Channel
PDFN5X6-8L
High-Current
SINEDEVICE
Vds Max
40V
Id Max
86A
Rds(on)
5.1mΩ@10V
Vgs(th)
3.4V
Quick Reference
The SDM51AG04KV is an N-Channel MOSFET in a PDFN5X6-8L package, manufactured by SINEDEVICE. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 86A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SINEDEVICE | Original Manufacturer |
| Package | PDFN5X6-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 86A | Max current handling |
| Power Dissipation (Pd) | 63W | Max thermal limit |
| On-Resistance (Rds(on)) | 5.1mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.4V | Voltage required to turn on |
| Gate Charge (Qg) | 15.1nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.029nF | Internal gate capacitance |
| Output Capacitance (Coss) | 663pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |