SCTWA90N65G2V-4 MOSFET Datasheet & Specifications
N-Channel
HiP247-4
High-Voltage
ST
Vds Max
650V
Id Max
119A
Rds(on)
24mΩ
Vgs(th)
5V
Quick Reference
The SCTWA90N65G2V-4 is an N-Channel MOSFET in a HiP247-4 package, manufactured by ST. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 119A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | HiP247-4 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 650V | Max breakdown voltage |
| Continuous Drain Current (Id) | 119A | Max current handling |
| Power Dissipation (Pd) | 565W | Max thermal limit |
| On-Resistance (Rds(on)) | 24mΩ | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 5V | Voltage required to turn on |
| Gate Charge (Qg) | 157nC | Switching energy |
| Input Capacitance (Ciss) | 3.38nF | Internal gate capacitance |
| Output Capacitance (Coss) | 294pF | Internal output capacitance |
| Operating Temp | -55℃~+200℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||