SBCP53-10T1G Datasheet & Equivalents
PNP
SOT-223
General Purpose
onsemi
VCEO
80V
Ic Max
1.5A
Pd Max
1.5W
hFE Gain
63
Quick Reference
The SBCP53-10T1G is a PNP bipolar junction transistor in a SOT-223 package, manufactured by onsemi. It supports a breakdown voltage of 80V and continuous collector current of 1.5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 80V | Max breakdown voltage |
| Collector Current (Ic) | 1.5A | Max current handling |
| Power Dissipation (Pd) | 1.5W | Max thermal limit |
| DC Current Gain (hFE) | 63 | Base signal amplification ratio |
| Transition Frequency (fT) | 50MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 500mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BCP53-10T1G | PNP | SOT-223 | 80V | 1.5A | 63 | 1.5W | onsemi 📄 PDF |
| BCP53-16T1G | PNP | SOT-223 | 80V | 1.5A | 100 | 1.5W | onsemi 📄 PDF |
| BCP53T1G | PNP | SOT-223 | 80V | 1.5A | 25 | 1.5W | onsemi 📄 PDF |
| FZT753TA | PNP | SOT-223 | 100V | 2A | 55 | 1.6W | DIODES 📄 PDF |
| TIP32CQ | PNP | SOT-223 | 100V | 3A | 100 | 1W | Huixin 📄 PDF |
| FZT705TA | PNP | SOT-223 | 120V | 2A | 3000 | 2W | DIODES 📄 PDF |
| FZT956TA | PNP | SOT-223 | 200V | 2A | 100 | 3W | DIODES 📄 PDF |