SBC857CLT1G-HXY Transistor Datasheet & Specifications

PNP BJT | HXY MOSFET

PNPSOT-23General Purpose
VCEO
45V
Ic Max
100mA
Pd Max
200mW
Gain
800
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Quick Reference

The SBC857CLT1G-HXY is a PNP bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the SBC857CLT1G-HXY datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO45VBreakdown voltage
IC Max100mACollector current
Pd Max200mWPower dissipation
Gain800DC current gain
Frequency100MHzTransition speed
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBT3906PNPSOT-2340V200mA200mW
LBSS5240LT1GPNPSOT-2340V2A300mW
ZXTP2025FTAPNPSOT-2350V5A1.2W
2SA812PNPSOT-2350V100mA300mW
LBC807-40LT1GPNPSOT-2345V500mA225mW
FMMT591ATAPNPSOT-2340V1A500mW
MMBT3906Q-7-FPNPSOT-2340V200mA350mW
MMBT3906PNPSOT-2340V200mA200mW
DSS5240TQ-7PNPSOT-2340V2A730mW
BC860CPNPSOT-2345V100mA200mW
View all SOT-23 PNP Transistors ›