SBC847AWT1G-HXY Transistor Datasheet & Specifications

NPN BJT | HXY MOSFET

NPNSOT-323General Purpose
VCEO
45V
Ic Max
100mA
Pd Max
150mW
Gain
450

Quick Reference

The SBC847AWT1G-HXY is a NPN bipolar transistor in a SOT-323 package. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the SBC847AWT1G-HXY datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-323Physical mounting
VCEO45VBreakdown voltage
IC Max100mACollector current
Pd Max150mWPower dissipation
Gain450DC current gain
Frequency100MHzTransition speed
VCEsat-Saturation voltage
Vebo6VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMST4401-7-FNPNSOT-32340V600mA200mW
MMST3904-7-FNPNSOT-32340V200mA200mW
BC817-40W-7NPNSOT-32345V500mA200mW
BC847CW-7-FNPNSOT-32345V100mA200mW
MMST2222A-7-FNPNSOT-32340V600mA200mW
MMST3904NPNSOT-32340V200mA200mW
BC847BW(UMW)NPNSOT-32345V100mA150mW
BC817-25WNPNSOT-32345V500mA200mW