S8550T Datasheet & Equivalents
PNP
SOT-523
General Purpose
Shikues
VCEO
25V
Ic Max
500mA
Pd Max
300mW
hFE Gain
350
Quick Reference
The S8550T is a PNP bipolar junction transistor in a SOT-523 package, manufactured by Shikues. It supports a breakdown voltage of 25V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Shikues | Original Manufacturer |
| Package | SOT-523 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 25V | Max breakdown voltage |
| Collector Current (Ic) | 500mA | Max current handling |
| Power Dissipation (Pd) | 300mW | Max thermal limit |
| DC Current Gain (hFE) | 350 | Base signal amplification ratio |
| Transition Frequency (fT) | 150MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 600mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 1uA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| S8550 | PNP | SOT-523 | 25V | 500mA | 350 | 300mW | YONGYUTAI 📄 PDF |
| S8550 | PNP | SOT-523 | 25V | 500mA | 120 | 200mW | CBI 📄 PDF |
| MMBT2907AT-7-F | PNP | SOT-523 | 60V | 600mA | 100 | 150mW | DIODES 📄 PDF |
| MMBT2907AT | PNP | SOT-523 | 60V | 600mA | 75 | 150mW | JSCJ 📄 PDF |
| CMUT2907A TR PBFREE | PNP | SOT-523 | 60V | 1.2A | 300 | 250mW | Central 📄 PDF |